(以下的中文部分是来自网络的翻译) TechInsights的报告指出： 1. 长江存储再次证明他们为3D NAND TLC和QLC应用开发的Xtacking混合键合技术的价值。Xtacking 3.0 232L采用BSSC技术，提高良率和性能，降低成本。 2. 尽管受到制裁后困难重重，包括该公司受限于向苹果供应基于中国生产的iPhone零部件，以及被列入美国的实体名单，但长江存储仍在开发最先进的技术。 3. 近期存储市场的低迷，以及许多内存制造商专注于节省成本的举措，可能为长江存储提供机遇，使其具有领先的更高比特密度的3D Xtacking NAND。 4. 本次发现超越同样在开发232层QLC 3D NAND器件的美光和英特尔。值得注意的是，三星目前的战略是专注于V9 3D NAND的TLC和QLC，因此没有在236层（V8）3D NAND上开发QLC。 5. 越来越多的证据表明，中国正在努力克服贸易限制、建立本土半导体供应链的势头比预期的要成功。 原文链接 https://www.techinsights.com/blog/china-does-it-again-nand-memory-market-first TechInsights has discovered the world's most advanced 3D NAND memory chip in a consumer device, and in a surprise technology leap, it comes from YMTC – China’s top 3D NAND manufacturer. 3D NAND memory is an essential component for high-performance computing (HPC) such as artificial intelligence (AI) and machine-learning. 3D NAND memory represents the bleeding edge of memory chip design, and is critical for high-performance, high-bandwidth computing such as AI. This is the first quad-level cell (QLC) 3D NAND die with more than two hundred active word lines that TechInsights has seen. The 232-layer QLC 3D NAND die manufactured by YMTC (Figure 1), was found in the ZhiTai Ti600 1TB solid state drive (SSD) which was launched in July 2023 without much fanfare (Figure 2 and Figure 3). This new QLC die has the highest bit density seen in a commercially available NAND product at 19.8 Gb/mm2. Key takeaways from this discovery include: YMTC proved again the merits of the Xtacking Hybrid Bonding technology they developed for 3D NAND TLC and QLC applications. BSSC technology adopted for Xtacking3.0 232L realized yield and performance improvements, and cost reduction as well. YMTC is quietly developing advanced technology despite being hampered by issues following sanctions including limiting the company from supplying parts to Apple for China-based iPhones and being placed on the United States’ entity list. The recent memory downturn, as well as many memory manufacturers focused on cost saving measures, may have provided YMTC an opportunity to pull ahead with its higher bit density 3D Xtacking NAND. This discovery usurps Micron and Intel (Solidigm) who are also developing 232-layer QLC 3D NAND devices. It should be noted that Samsung is not developing QLC on its 236-layer (V8) 3D NAND because its current strategy is to focus on the V9 3D NAND TLC and QLC. However, at Samsung’s Memory Tech Day last week, the company announced the first QLC product targeting the mobile market, a 512GB UFS 3.1 product with 176-layers (V7) technology. SK Hynix is mostly focused on TLC devices rather than QLC products. Like the innovation revealed by TechInsights in the Huawei Mate 60 Pro’s HiSilicon Kirin 9000s processor (which used SMIC 7nm (N+2) process) evidence is mounting that China’s momentum to overcome trade restrictions and build its own domestic semiconductor supply chain is more successful than expected.
发明Xtacking技术的长江存储，大概是在美国制裁中国半导体工业之前，极少数的会被国外同行认可的中国半导体企业。苹果公司本已决定在iPhone 15中使用长江存储的记忆体芯片，但受到Rubio参议员、Cotton参议员以及众院中国委员会主席Gallagher众议员等的激烈反对和威胁，最终苹果放弃了引入长江存储的产品。
长江存储在经历了多轮制裁，其CEO陈南翔今年亲自公开抱怨美国的制裁让其工厂的机台因为无法取得原厂商的技术支持和零件，从而变成了一堆堆的废铁。因此外界普遍认为长江存储会止步于美国制裁的边界线上，即美国为长江存储量身定制的中国128层及以上的NAND闪存芯片制造企业不可取得任何包含美国技术的设备和服务支持。但此次发现显示，长江存储已经大幅跨越了制裁线，产出了232层的NAND闪存芯片，却并没有使用美国泛林Lam Research独家掌握的一些蚀刻技术，这些技术原本被认为是不可取代的。同时也脱离了美国科磊KLA的技术支持。
韩国的半导体情报公司指出，长江存储将在今年年底推出400层的NAND，进一步扩大它的领先地位。如果中国没有隐瞒上海中微公司在蚀刻机研发上的进展，那么长江存储的技术进步是非常可观的。上海中微虽然正在受到资助，但目前公开的资料看，还没有完成研发能够匹敌美国泛林公司水平的蚀刻机，按照进度因该在2023年底到2024年初，交付蚀刻机的样机。
这样看来，在逻辑芯片（华为麒麟9000S）和存储芯片这两个主要的半导体制造阵地上，中国都取得了超乎外界预期的进步。
(以下的中文部分是来自网络的翻译) TechInsights的报告指出：
1. 长江存储再次证明他们为3D NAND TLC和QLC应用开发的Xtacking混合键合技术的价值。Xtacking 3.0 232L采用BSSC技术，提高良率和性能，降低成本。
2. 尽管受到制裁后困难重重，包括该公司受限于向苹果供应基于中国生产的iPhone零部件，以及被列入美国的实体名单，但长江存储仍在开发最先进的技术。
3. 近期存储市场的低迷，以及许多内存制造商专注于节省成本的举措，可能为长江存储提供机遇，使其具有领先的更高比特密度的3D Xtacking NAND。
4. 本次发现超越同样在开发232层QLC 3D NAND器件的美光和英特尔。值得注意的是，三星目前的战略是专注于V9 3D NAND的TLC和QLC，因此没有在236层（V8）3D NAND上开发QLC。
5. 越来越多的证据表明，中国正在努力克服贸易限制、建立本土半导体供应链的势头比预期的要成功。
原文链接 https://www.techinsights.com/blog/china-does-it-again-nand-memory-market-first
TechInsights has discovered the world's most advanced 3D NAND memory chip in a consumer device, and in a surprise technology leap, it comes from YMTC – China’s top 3D NAND manufacturer. 3D NAND memory is an essential component for high-performance computing (HPC) such as artificial intelligence (AI) and machine-learning. 3D NAND memory represents the bleeding edge of memory chip design, and is critical for high-performance, high-bandwidth computing such as AI. This is the first quad-level cell (QLC) 3D NAND die with more than two hundred active word lines that TechInsights has seen.
The 232-layer QLC 3D NAND die manufactured by YMTC (Figure 1), was found in the ZhiTai Ti600 1TB solid state drive (SSD) which was launched in July 2023 without much fanfare (Figure 2 and Figure 3). This new QLC die has the highest bit density seen in a commercially available NAND product at 19.8 Gb/mm2.
Key takeaways from this discovery include:
YMTC proved again the merits of the Xtacking Hybrid Bonding technology they developed for 3D NAND TLC and QLC applications. BSSC technology adopted for Xtacking3.0 232L realized yield and performance improvements, and cost reduction as well. YMTC is quietly developing advanced technology despite being hampered by issues following sanctions including limiting the company from supplying parts to Apple for China-based iPhones and being placed on the United States’ entity list. The recent memory downturn, as well as many memory manufacturers focused on cost saving measures, may have provided YMTC an opportunity to pull ahead with its higher bit density 3D Xtacking NAND. This discovery usurps Micron and Intel (Solidigm) who are also developing 232-layer QLC 3D NAND devices. It should be noted that Samsung is not developing QLC on its 236-layer (V8) 3D NAND because its current strategy is to focus on the V9 3D NAND TLC and QLC. However, at Samsung’s Memory Tech Day last week, the company announced the first QLC product targeting the mobile market, a 512GB UFS 3.1 product with 176-layers (V7) technology. SK Hynix is mostly focused on TLC devices rather than QLC products. Like the innovation revealed by TechInsights in the Huawei Mate 60 Pro’s HiSilicon Kirin 9000s processor (which used SMIC 7nm (N+2) process) evidence is mounting that China’s momentum to overcome trade restrictions and build its own domestic semiconductor supply chain is more successful than expected.
正是因为位移非常准确，所以可以做到准确多次曝光，附带的另外一个好处就是，可以生产更多层次的芯片，这也就是长江存储的230多层的3D芯片，其实技术的源头都很类似。隐约觉得，中国所有可能被制裁的公司，在共享信息和技术一起搞研发。 这种方面，不知道是国内哪些牛人做出来的。是材料有突破，还是理论有突破，就不得而知了。
最根本还是科技人才竞争，而美国在这方面常年没有投资
那时就是政治，什么东芝啊，三菱啊，直接把芯片部门的人裁掉了。
所以，日本有个东芝还是三零的一个技术部门头，80多岁了还在中国开芯片公司，就是咽不下这口气，就是要和美国制裁对着，日本不准开，他就在中国开芯片公司。
有路边社的消息说那个芯片也不是ASML的DUV做出来的， ASML做的东西都要打个印记。。华为的芯片没有这个印记 所以SMIC是怎么做出来的，真的仍然是个谜
应该是ASML的，不然早宣传麻了